ABSTRACT: The isolation of a growing number of two-dimensional (2D) materials has inspired worldwide efforts to integrate distinct 2D materials into van der Waals (vdW) heterostructures. While a tremendous amount of research activity has occurred in assembling disparate 2D materials into “all-2D” van der Waals heterostructures and making outstanding progress on fundamental studies, practical applications of 2D materials will require a broader integration strategy. I will present our ongoing and recent work on integration of 2D materials with 3D electronic materials to realize logic switches and memory devices with novel functionality that can potentially augment the performance and functionality of Silicon technology. First, I will present our recent work on gate-tunable diode¹ and tunnel junction devices² based on integration of 2D chalcogenides with Si and GaN. Following this I will present our recent work on non-volatile memories based on Ferroelectric Field Effect Transistors (FE-FETs) made using a heterostructure of MoS₂/AlScN³ and I also will present our work on Ferroelectric Diode devices also based on thin AlScN.⁴

Next, I will present our work on light-trapping in excitonic systems⁵ namely, 2D chalcogenides and halide perovskites. I will present the effect of nano-structuring on hybridization between excitons, plasmons and cavity photons.⁶ I will extend this concept to artificial superlattice of 2D excitonic materials⁷ as well as natural superlattices in the form of 2D halide perovskites⁸ and demonstration of hybrid exciton-polariton emission at room temperatures.⁹ I will end by giving a broad perspective on future opportunities of 2D and other low-dimensional materials in basic science and applied microelectronics technology.

BIOSKETCH: Deep Jariwala is an Assistant Professor in Department of Electrical and Systems Engineering at the University of Pennsylvania (Penn). Deep completed his undergraduate degree in Metallurgical Engineering from the Indian Institute of Technology BHU, in 2010 and his Ph.D. in Materials Science and Engineering at Northwestern University in 2015. Deep was a Resnick Prize Postdoctoral Fellow at the Caltech from 2015-2017 before joining Penn in 2018 and starting his own group. His research interests broadly lie at the intersection of new materials, surface science and solid-state devices for computing, communication and energy harvesting applications as well as in the development of correlated and functional imaging techniques.