Areas of Interest: Heat transfer and electron transport in nanostructures, interfaces & packaging. Thermal, electronic, optoelectronic, thermoelectric devices and systems. Energy conversion, storage and thermal management. Ultrafast optical spectroscopy and high-frequency electronics. Nanomaterials design, processing and manufacturing.
L. Zeng, K.C. Collins, Y. Hu, M.N. Luckyanova, A.A. Maznev, S. Huberman, V. Chiloyan, J. Zhou, X. Huang, K.A. Nelson, and G. Chen, “Measuring phonon mean free path distributions by probing quasiballsitic phonon transport in grating nanostructures,” Scientific Reports 5, 17131 (2015).
B. Lv, Y. Lan, X. Wang, Q. Zhang, Y. Hu, A. Jacobson, B. David, G. Chen, Z. Ren, C. Chu, “Experimental study of the proposed super-thermal-conductor: BAs,” Appl. Phys. Lett. 106, 074105 (2015).
Y. Hu, L. Zeng, A. J. Minnich, M. S. Dresselhaus, and G. Chen, “Spectral mapping of thermal conductivity through nanoscale ballistic transport,” Nature Nanotechnology 10, 701 (2015).
Y. Hu, F. Kuemmeth, C. Lieber and C. Marcus, “Hole spin relaxation in Ge–Si core–shell nanowire qubits,” Nature Nanotechnology 7, 47-50 (2012).
H. Yan, H. Choe, S. Nam, Y. Hu, S. Das, J. Klemic, J. Ellenbogen and C. Lieber, “Programmable nanowire nanoprocessor, ” Nature 470, 240-244 (2011).
P. Xie, Y. Hu, Y. Fang, J. Huang and C. Lieber, “Diameter-dependent dopant location in silicon and germanium nanowires,” Proc. Natl. Acad. Sci. USA, 106, 15254-15258 (2009).
C. Wang, Y. Hu, C. Lieber and S. Sun, “Ultrathin Au nanowires and their transport properties,” J. Am. Chem. Soc. 130, 8902-8903 (2008).
Y. Hu, J. Xiang, G. Liang, H. Yan and C. Lieber, “Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed,” Nano Letters 8, 925-930 (2008).
Y. Hu, H. Churchill, D. Reilly, J. Xiang, C. Lieber and C. Marcus, “A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor,” Nature Nanotechnology 2, 622-625 (2007).
J. Xiang, W. Lu, Y. Hu, Y. Wu, H. Yan and C. Lieber, “Ge/Si nanowire heterostructures as high-performance field-effect transistors,” Nature 441, 489-493 (2006).